PART |
Description |
Maker |
IS46LR32160B |
4M x 32Bits x 4Banks Mobile DDR SDRAM
|
Integrated Silicon Solu...
|
HY5Y7A2DLMP-HF HY5Y7A2DLM-HF |
4Banks x 4M x 32bits Synchronous DRAM
|
http:// Hynix Semiconductor
|
IS42VM16160E |
4M x 16Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
IS43LR16800F-6BLI |
2M x 16Bits x 4Banks Mobile DDR SDRAM
|
Integrated Silicon Solution...
|
HMC550 HT6740 HYB25S1G800TCL-37 HFV6 HY5V22LF-P HY |
GAAS MMIC SPST FAILSAFE SWITCH, DC - 6 GHz 13.56MHz RFID Transponder MEMORY SPECTRUM AUTOMOTIVE RELAY 4 Banks x 1M x 32Bit Synchronous DRAM 4Banks x 2M x 32bits Synchronous DRAM 3.3 VOLT HIGH-DENSITY SUPERSYNC II36-BIT FIFO
|
美国讯泰微波有限公司上海代表 Holtek Semiconductor Inc. Infineon Technologies AG 厦门宏发电声股份有限公司 Hynix Semiconductor Inc. Integrated Device Technology, Inc.
|
TCS59SM804BFTL-80 TCS59SM808BFTL-80 TCS59SM808BFT- |
8M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 8M×4Banks×8Bits Synchronous DRAM(48M×8位同步动态RAM) 4M×4Banks×16Bits Synchronous DRAM(44M×16位同步动态RAM) 4米4Banks × 16位同步DRAM米16位同步动态RAM)的 16M×4Banks×4Bits Synchronous DRAM(46M×4位同步动态RAM) 1,600 × 4Banks × 4Bits同步DRAM4,600 × 4位同步动态RAM)的
|
Toshiba Corporation Toshiba, Corp.
|
W9812G2GB-6 W9812G2GB-6I W9812G2GB-75 W9812G2GB |
1M 】 4 BANKS 】 32BITS SDRAM
|
Winbond
|
W9864G2JH |
512K X 4 BANKS X 32BITS SDRAM
|
Winbond
|
W9864G2IB |
512K X 4 BANKS X 32BITS SDRAM
|
Winbond
|
W9864G2GH-5 W9864G2GH-7 |
512K X 4 BANKS X 32BITS SDRAM
|
Winbond Electronics Corp http://
|
MOC |
Applications: Wired Network, Automotive, Mobile Communication, WiMAX, WLAN, Mobile
|
MERITEK ELECTRONICS COR...
|
HYB18M512160BFX HYB18M512160BFX-7.5 |
DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM
|
Qimonda AG
|